Dual N-Channel Enhancement Mode Field Effect Transistor
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V,
RDS(ON) = 0.040 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
Absolute Maximum Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
TA = 25oC unless otherwise noted
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
TJ,TSTG Operating and Storage Temperature Range
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
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