DatasheetsPDF.com

FDS8926A

Fairchild Semiconductor
Part Number FDS8926A
Manufacturer Fairchild Semiconductor
Description Dual N-Channel MOSFET
Published Mar 30, 2005
Detailed Description February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhan...
Datasheet PDF File FDS8926A PDF File

FDS8926A
FDS8926A

Overview
February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance.
These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 5.
5 A, 30 V.
RDS(ON) = 0.
030 Ω @ VGS = 4.
5 V RDS(ON) = 0.
038 Ω @ VGS = 2.
5 V.
High density cell design f...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)