30V N-Channel PowerTrench MOSFET
FDS7788
February 2004
FDS7788
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been des...
Description
FDS7788
February 2004
FDS7788
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V RDS(ON) = 5.0 mΩ @ VGS = 4.5 V Low gate charge Fast switching speed High power and current handling capability High performance trench technology for extremely low RDS(ON)
Applications
DC/DC converter Load switch Motor drives
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
18 50 2.5 1.2 1.0 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7788 Device FDS7788 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDS7788 Rev E (W)
FDS7788
Electrical Characteristics
Symbol
BVDSS ∆BVD...
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