FDS7766

FDS7766 March 2003 FDS7766 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 17 A, 30 V RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching Applications Synchronous rectifier DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1a) Units V V A W 17 60 2.5 1.2 1.0 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS7766 Device FDS7766 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS7766 Rev E (W) FDS7766 Electrical Charac...