30V N-Channel PowerTrench MOSFET
FDS7096N3
January 2004
FDS7096N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been ...
Description
FDS7096N3
January 2004
FDS7096N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
14 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
DC/DC converter Power management Load switch
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W °C
14 60 3.0 1.5 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W
Package Marking and Ordering Information
Device Marking FDS7096N3
2004 Fairchild Semiconductor Corporation
Device FDS7096N3
Reel Size 13’’
Tape width 12mm
Quantity 2500 units
FDS7096N3 Rev E2 (W)
FDS7096N3
Electrical Characteristics
Symbol
BV...
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