FDS7079ZN3

FDS7079ZN3 February 2004 FDS7079ZN3 30 Volt P-Channel PowerTrench MOSFET General Description Advanced P Channel MOSFET combined with Advanced SO8 FLMP package providing a device with extremely low thermal impedance and improved electrical performance. Applications for this device include multi-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Features –16 A, –30 V. RDS(ON) = 7.5 mΩ @ VGS = –10 V RDS(ON) = 11.5 mΩ @ VGS = – 4.5 V ESD protection diode (note 3) ESD rating: 4kV High performance trench technology for extremely low RDS(ON) FLMP SO-8 package for enhanced thermal performance in industry-standard package size NC D NC D NC D NC D FLMP SO-8 D Bottom Side Drain Contact 5 6 4 3 2 1 Pin 1SO- G G S S S S S S TA=25oC unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –30 ±25 (Note 1a) Units V V A W °C –16 –60 3.13 1.5 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS7079ZN3 2004 Fairchild Semiconductor Corporation Device FDS7079ZN3 Reel Size 13’’ Tape width 12mm Quantit...