DatasheetsPDF.com

FDS7066N3 Dataheets PDF



Part Number FDS7066N3
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Datasheet FDS7066N3 DatasheetFDS7066N3 Datasheet (PDF)

FDS7066N3 May 2003 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 23 A, 30 V RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V • High performance trench techn.

  FDS7066N3   FDS7066N3


Document
FDS7066N3 May 2003 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 23 A, 30 V RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications • Synchronous rectifier • DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1a) Units V V A W °C 23 60 3.0 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDS7066N3 2002 Fairchild Semiconductor Corporation Device FDS7066N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS7066N3 Rev B1 (W) FDS7066N3 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = –16 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, VDS = 10 V, ID = 23 A ID = 21 A ID = 23 A, TJ = 125°C VDS = 5 V ID = 23 A Min 30 Typ Max Units V Off Characteristics 24 1 100 –100 mV/°C µA nA nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance 1 1.5 –4.3 4.4 5.2 6.0 3 V mV/°C 5.5 6.5 8.0 mΩ ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD 30 116 A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz 4973 826 341 pF pF pF Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 8 85 25 22 16 136 40 69 ns ns ns ns nC nC nC VDS = 15 V, ID = 23 A, VGS = 5.0 V 43 13 11 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage 2.5 (Note 2) A V 0.7 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7066N3 Rev B1 (W) FDS7066N3 Typical Characteristics 60 VGS = 10V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0 0.25 0.5 0.75 1 1.25 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5V 4.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 3.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 3.5V 4.0V 4.5V 6.0V 10V VGS = 3.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.014 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID = 23A VGS = 10V ID = 11.5A 0.012 0.01 0.008 TA = 125oC 0.006 0.004 0.002 0 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC Figure 3. On-Resistance Variation withTemperature. 60 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5.0V 50 ID, DRAIN CURRENT (A) 40 30 20 25oC 10 -55oC 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC TA = 125oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7066N3 Rev B1 (W) FDS7066N3 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID .


FDS7066ASN3 FDS7066N3 FDS7066N7


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)