Document
FDS6993
June 2003
FDS6993
Dual P-Channel PowerTrench® MOSFET
General Description These P-Channel MOSFETs are made using FSC’s PowerTrench® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features
• Q1: P-Channel –4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V • Q2: RDS(on) = 85mΩ @ VGS = –4.5V P-Channel
–6.8A, –12V RDS(on) = 17mΩ @ VGS = –4.5V RDS(on) = 24mΩ @ VGS = –2.5V • RDS(on) = 30mΩ @ VGS = –1.8V High power and handling capability in a widely used surface mount package
D1 D
D1 D
DD2 D2 D
5 6 7
G2 S2 G
Q2
4 3 2
Q1
SO-8
Pin 1 SO-8
G1 S1 S
S
8
1
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25°C unless otherwise noted
Parameter
Q1
–30
(Note 1a)
Q2
–12 ±8 –6.8 –20 2 1.6 1 0.9 –55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
±25 –4.3 –20
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6993 Device FDS6993 Reel Size 13” Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS6993 Rev C (W)
FDS6993
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = –250 µA VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V VDS = –10 V, VGS = 0 V VGS = ±25 V, VDS = 0 V VGS = ±8 V, VDS = 0 V VDS = VGS, ID = –250 µA VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –4.3 A VGS = –10 V, ID = –4.3 A, TJ = 125°C VGS = –4.5 V, ID = –3.4 A VGS = –4.5 V, ID = –6.8 A VGS = –4.5 V, ID = –6.8 A, TJ = 125°C VGS = –2.5 V, ID = –5.9 A VGS = –1.8 V, ID = –5.0 VGS = –10 V, VDS = –5 V VGS = –4.5 V, VDS = –5 V VDS = –10 V, ID = –7 A VDS = –5 V, ID = –5 A Q1 VDS = –15 V, VGS = 0 V, f = 1.0 MHz
Type Min Typ Max Units
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 –30 –12 –21 –0.9 –1 –1 ±100 ±100 –1 –0.4 –1.8 –0.5 4 3 48 64 74 11 14 14 19 –20 –20 9 34 530 2980 140 1230 70 790 –3 –1.5 V mV/°C µA nA
Off Characteristics
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
V mV/°C
55 80 85 17 24 24 30
mΩ
Q2
ID(on) gFS
On-State Drain Current Forward Transconductance
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = –6 V, VGS = 0 V, f = 1.0 MHz pF pF pF
FDS6993 Rev C (W)
FDS6993
Electrical Characteristics
Symbol Parameter
(continued)
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Q1 VDD = –15 V, ID = –1 A, VGS = –10V, RGEN = 6 Ω Q2 VDD = –6 V, ID = –1 A, VGS = –4.5V, RGEN = 6 Ω Q1 VDS = –15 V, ID = –4.3 A, VGS = –5 V Q2 VDS = –6 V, ID = –6.8 A, VGS = –5 V
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
10 19 14 20 14 134 9 121 5.5 32 1.8 4.0 2.2 8.0
19 34 26 35 24 215 18 193 7.7 45
ns ns ns ns nC nC nC
Drain–Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = –1.3 A Voltage VGS = 0 V, IS = –1.3 A
(Note 2) (Note 2)
–0.8 –0.6
–1.3 –1.3 –1.2 –1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper
b) 125°/W when mounted on a .02 in2 pad of 2 oz copper
c) 135°/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6993 Rev C (W)
FDS6993
Typical Characteristics: Q1
20
2
VGS = -10V
16 -ID, DRAIN CURRENT (A)
-4.5V V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-5.0V V
VGS=-4.0V
1.8
-6.0V V
12
1.6
-4.5V -5.0V -6.0V
-4.0V
1.4
8
-3.5V
4
1.2
-7.0V -8.0V -10V
-3.0V
0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5
1
0.8 0 4 8 12 -ID, DRAIN CURRENT (A) 16 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Va.