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FDS6993 Dataheets PDF



Part Number FDS6993
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual P-Channel PowerTrench MOSFET
Datasheet FDS6993 DatasheetFDS6993 Datasheet (PDF)

FDS6993 June 2003 FDS6993 Dual P-Channel PowerTrench® MOSFET General Description These P-Channel MOSFETs are made using FSC’s PowerTrench® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features • Q1: P-Channel –4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V • Q2: RDS(on) = 85mΩ @ VGS = –4.5V P-Channel –6.8A, –12V RD.

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FDS6993 June 2003 FDS6993 Dual P-Channel PowerTrench® MOSFET General Description These P-Channel MOSFETs are made using FSC’s PowerTrench® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features • Q1: P-Channel –4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V • Q2: RDS(on) = 85mΩ @ VGS = –4.5V P-Channel –6.8A, –12V RDS(on) = 17mΩ @ VGS = –4.5V RDS(on) = 24mΩ @ VGS = –2.5V • RDS(on) = 30mΩ @ VGS = –1.8V High power and handling capability in a widely used surface mount package D1 D D1 D DD2 D2 D 5 6 7 G2 S2 G Q2 4 3 2 Q1 SO-8 Pin 1 SO-8 G1 S1 S S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 –30 (Note 1a) Q2 –12 ±8 –6.8 –20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±25 –4.3 –20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6993 Device FDS6993 Reel Size 13” Tape width 12mm Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDS6993 Rev C (W) FDS6993 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = –250 µA VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V VDS = –10 V, VGS = 0 V VGS = ±25 V, VDS = 0 V VGS = ±8 V, VDS = 0 V VDS = VGS, ID = –250 µA VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –4.3 A VGS = –10 V, ID = –4.3 A, TJ = 125°C VGS = –4.5 V, ID = –3.4 A VGS = –4.5 V, ID = –6.8 A VGS = –4.5 V, ID = –6.8 A, TJ = 125°C VGS = –2.5 V, ID = –5.9 A VGS = –1.8 V, ID = –5.0 VGS = –10 V, VDS = –5 V VGS = –4.5 V, VDS = –5 V VDS = –10 V, ID = –7 A VDS = –5 V, ID = –5 A Q1 VDS = –15 V, VGS = 0 V, f = 1.0 MHz Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 –30 –12 –21 –0.9 –1 –1 ±100 ±100 –1 –0.4 –1.8 –0.5 4 3 48 64 74 11 14 14 19 –20 –20 9 34 530 2980 140 1230 70 790 –3 –1.5 V mV/°C µA nA Off Characteristics On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V mV/°C 55 80 85 17 24 24 30 mΩ Q2 ID(on) gFS On-State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = –6 V, VGS = 0 V, f = 1.0 MHz pF pF pF FDS6993 Rev C (W) FDS6993 Electrical Characteristics Symbol Parameter (continued) TA = 25°C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = –15 V, ID = –1 A, VGS = –10V, RGEN = 6 Ω Q2 VDD = –6 V, ID = –1 A, VGS = –4.5V, RGEN = 6 Ω Q1 VDS = –15 V, ID = –4.3 A, VGS = –5 V Q2 VDS = –6 V, ID = –6.8 A, VGS = –5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 10 19 14 20 14 134 9 121 5.5 32 1.8 4.0 2.2 8.0 19 34 26 35 24 215 18 193 7.7 45 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = –1.3 A Voltage VGS = 0 V, IS = –1.3 A (Note 2) (Note 2) –0.8 –0.6 –1.3 –1.3 –1.2 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°/W when mounted on a .02 in2 pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6993 Rev C (W) FDS6993 Typical Characteristics: Q1 20 2 VGS = -10V 16 -ID, DRAIN CURRENT (A) -4.5V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -5.0V V VGS=-4.0V 1.8 -6.0V V 12 1.6 -4.5V -5.0V -6.0V -4.0V 1.4 8 -3.5V 4 1.2 -7.0V -8.0V -10V -3.0V 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 1 0.8 0 4 8 12 -ID, DRAIN CURRENT (A) 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Va.


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