FDS6993

FDS6993 June 2003 FDS6993 Dual P-Channel PowerTrench® MOSFET General Description These P-Channel MOSFETs are made using FSC’s PowerTrench® technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost. Features Q1: P-Channel –4.3A, –30V RDS(on) = 55mΩ @ VGS = –10V Q2: RDS(on) = 85mΩ @ VGS = –4.5V P-Channel –6.8A, –12V RDS(on) = 17mΩ @ VGS = –4.5V RDS(on) = 24mΩ @ VGS = –2.5V RDS(on) = 30mΩ @ VGS = –1.8V High power and handling capability in a widely used surface mount package D1 D D1 D DD2 D2 D 5 6 7 G2 S2 G Q2 4 3 2 Q1 SO-8 Pin 1 SO-8 G1 S1 S S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 –30 (Note 1a) Q2 –12 ±8 –6.8 –20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±25 –4.3 –20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6993 Device FDS6993 Reel Size 13” Tape width 12mm Quantity 2500 units ©2003 Fairchild Semiconductor Corpora...