FDS6990S

FDS6990S May 2001 FDS6990S Dual 30V N-Channel PowerTrench® SyncFET ™ General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode. Features 7.5A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V Includes SyncFET Schottky diode Low gate charge (11 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter Motor drives D2 D DD2 DD1 D1 D 5 Q1 4 3 2 Q2 6 7 G1 SO-8 Pin 1 SO-8 S1 G G2 S S2 S S 8 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A =25 oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 7.5 20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 –55 to +150 °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case...