Document
FDS6990A
June 2003
FDS6990A
Dual N-Channel Logic Level PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• 7.5 A, 30 V.
RDS(ON) = 18 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS = 4.5 V
• Fast switching speed • Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
DD1 DD1 DD2 DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5 6 Q1 7
Q2
8
4 3 2 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6990A
FDS6990A
13’’
Ratings
30 ± 20 7.5 20 1.6 1.0 0.9 –55 to +150
78 40
Tape width 12mm
Units
V V A
W
°C
°C/W °C/W
Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS6990A Rev D(W)
FDS6990A
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS ∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
IGSS Gate–Source Leakage
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VGS = ±20 V, VDS = 0 V
30
V 26 mV/°C
1 10
±100
µA nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1 1.9 3
V
ID = 250 µA, Referenced to 25°C –4 mV/°C
VGS = 10 V, ID = 7.5 A VGS = 4.5 V, ID = 6.5 A VGS = 10 V, ID = 7.5 A,TJ = 125°C
11 18 mΩ 13 23
15 31
VGS = 10 V, VDS = 5 V
20
A
VDS = 5 V, ID = 7.5 A
33 S
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
1235 295 120 2.3
pF pF pF Ω
Switching Characteristics
td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 7.5 A, VGS = 5 V
10 19 5 10 28 44 10 19 12 17 3.5 4.2
ns ns ns ns nC nC nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 7.5 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
1.3 0.7 1.2
24 13
A V
nS nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper
Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper
c) 135°C/W when mounted on a minimum mounting pad.
FDS6990A Rev D(W)
FDS6990A
Typical Characteristics
ID, DRAIN CURRENT (A)
20 VGS = 10.0V
3.5V
16
4.5V
4.0V
12
8
3.0V
4
0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2
1.8 VGS = 3.5V
1.6
1.4 4.0V
1.2 4.5V 5.0V 6.0V
1 10.0V
0.8 0
4 8 12 16 ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.6 ID = 7.5A
VGS = 10.0V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with Temperature.
RDS(ON), ON-RESISTANCE (OHM)
0.05 0.04
ID = 3.75A
0.03
0.02
0.01
TA = 25oC
TA = 125oC
0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
ID, DRAIN CURRENT (A)
20 VDS = 5V
16
12 TA = 125oC
8 25oC
-55oC 4
0 1.5
2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
IS, REVERSE DRAIN CURRENT (A)
100 VGS = 0V
10
1
0.1.