Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898A
OCTOBER 2001
FDS6898A
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
These ...
Description
FDS6898A
OCTOBER 2001
FDS6898A
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V
Low gate charge (16 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability
D2 D
D2 D
DD1 D1 D
5 6 7
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
G2 S2 S
G1 S1 G
S
8
1
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ± 12
(Note 1a)
Units
V V A W
9.4 38 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 –55 to +150 °C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6898A Device FDS6898A Reel Size 13’’ Tape width 12mm Quantity 2500 units
©...
Similar Datasheet