Dual P-Channel MOSFET
November 1998
FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V speci...
Description
November 1998
FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Features
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 4 3 2 1
S FD 75 68
G1 S2 G2
6 7 8
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless otherwise noted FDS6875 -20 ±8
(Note 1a)
Units V V A
-6 -20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
1.6 1 0.9 -55 to 150 °C
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
FDS6875 Rev.C
© 1998 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25 OC...
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