FDS6690S
May 2000 PRELIMINARY
FDS6690S
30V N -Channel PowerTrench® SyncFET™
General Description
The FDS6690S is design...
FDS6690S
May 2000 PRELIMINARY
FDS6690S
30V N -Channel PowerTrench® SyncFET™
General Description
The FDS6690S is designed to replace a single SO-8 MOSFET and
Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690S as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a
Schottky diode.
Features
10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.5 V
Includes SyncFET
Schottky diode Low gate charge (11 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability
Applications
DC/DC converter Motor drives
D D D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
10 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ , TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Order...