Single N-Channel / Logic Level / PowerTrench MOSFET
FDS6690A
February 2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
tm
General Description
This N-Ch...
Description
FDS6690A
February 2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
tm
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
11 A, 30 V.
RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD DDDD DD
SO-8
Pin 1 SO-8
SS SS SS GG
54 63 72 81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
EAS TJ, TSTG
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6690A
FDS6690A
13’’
Ratings
30 ±20 11 50 2.5 1.0 96 –55 to +150
50 125 25
Tape width 12mm
Units
V...
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