FDS6690

January 2000 FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.0200 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching . Low gate charge (Qg typ = 13 nC). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S FD 9 0 66 S G 5 6 7 8 4 3 2 1 SO-8 pin 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS6690 30 ±20 (Note 1a) Units V V A 10 50 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 2.5 1.2 1 -55 to 150 W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDS6690 Rev.C Electrical Characteristic...