P-Channel Logic Level PowerTrenchTM MOSFET
FDS6685
March 1999 PRELIMINARY
FDS6685
P-Channel Logic Level PowerTrenchTM MOSFET
General Description
This P-Channel L...
Description
FDS6685
March 1999 PRELIMINARY
FDS6685
P-Channel Logic Level PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
-8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V Extended VGSS range (±25V) for battery applications. Low gate charge (19nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
Battery protection Load switch Motor drives
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
-30 ±25
(Note 1a)
Units
V V A W
-8.8 -50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Outlines and Ordering Information
Device Marking
FDS6685
Device
FDS...
Similar Datasheet