FDS6576

FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET December 2006 tm FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Applications Load switch Battery protection Power management  –11 A, –20 V. RDS(ON) = 0.014 : @ VGS = –4.5 V  RDS(ON) = 0.020 : @ VGS = –2.5 V r Extended VGSS range ( 12V) for battery applications. Low gate charge (43nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. RoHS Compliant. D D D D G SO-8 SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) RTJC Thermal Resistance, Junction-to-Case (Note 1) Package Marking and Ordering Information Device Marking FDS6576 Device FDS6576 Reel Size 13’’ 5 6 7 8 Ratings –20 r 12 –11 –50 2.5 1.2 1.0 –55 to +150 50 125 25 Tape width...