FDS6375

FDS6375 September 2001 FDS6375 P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V). Applications Power management Load switch Battery protection Features –8 A, –20 V. RDS(ON) = 24 mΩ @ VGS = –4.5 V RDS(ON) = 32 mΩ @ VGS = –2.5 V Low gate charge (26 nC typical) High performance trench technology for extremely low RDS(ON) High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6375 FDS6375 13’’ 5 4 6 3 7 2 8 1 Ratings –20 ±8 –8 –50 2.5 1.2 1.0 –55 to +175 50 125 25 Tape width 12mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units ©2001 Fairchild Semiconductor Corporation FDS6375 Rev E(W) FDS6375 El...