FDS4672A

FDS4672A February 2007 FDS4672A tm 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications DC/DC converter Features 11 A, 40 V. RDS(ON) = 13 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) Low gate charge (35 nC typical) High power and current handling capability RoHS Compliant D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS4672A FDS4672A 13’’ 5 6 7 8 Ratings 40 ±12 11 50 181 2.5 1.4 1.2 -55 to +175 50 25 Tape width 12mm 4 3 2 1 Units V V A mJ W °C °C/W °C/W Quantity 2500 units ©2007 Fairchild Semiconductor Corporation FDS4672A Rev C1 (W) FDS4672A Electrical Characteristics Symbol Parameter TA = 25°C unless otherw...