FDS4559

FDS4559 April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features Q1: N-Channel 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10V RDS(on) = 75 mΩ @ VGS = 4.5V Q2: P-Channel –3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V RDS(on) = 135 mΩ @ VGS = –4.5V Applications DC/DC converter Power management LCD backlight inverter D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 60 (Note 1a) Q2 –60 ±20 –3.5 –20 2 1.6 1.2 1 -55 to +175 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 4.5 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4559 Device FDS4559 Reel Size 13” Tape width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS4559 Rev C1(W) FDS4559 Electrical Characteristics Symbol W DSS IAR TA...