N-Channel MOSFET
April 1998
FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description
This N-Channel L...
Description
April 1998
FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.0200 Ω @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching . Low gate charge (typical 22 nC).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D D D
5
4 3 2 1
S F D 10 44
S S S G
6 7 8
SO-8
pin 1
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless other wise noted
FDS4410 Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
30 ±20 10 50 2.5 1.2 1 -55 to 150
V V A
W
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
FDS4410 Rev.B1
© 1998 Fairchild Semiconductor Corporation
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