N-Channel MOSFET
FDS4080N7
May 2003
FDS4080N7
40V N-Channel FLMP PowerTrench MOSFET
General Description
This N-Channel MOSFET has been...
Description
FDS4080N7
May 2003
FDS4080N7
40V N-Channel FLMP PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
13 A, 40 V RDS(ON) = 10 mΩ @ VGS = 10 V
High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching (Qg = 30 nC ) FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
Synchronous rectifier DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
40 ± 20
(Note 1a)
Units
V V A W °C
13 60 3.9 –55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a)
38 1
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS4080N7 Device FDS4080N7 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2003 Fairchild Semiconductor Corporation
FDS4080N7 Rev C1 (W)
FDS4080N7
Electrical Characteristics
Symbo...
Similar Datasheet