FDS3912

FDS3912 October 2001 FDS3912 100V Dual N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3 A, 100 V. RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V Fast switching speed Low gate charge (14 nC typ) High performance trench technology for extremely low RDS(ON) High power and current handling capability 5 6 7 8 Q2 Q1 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ±20 (Note 1a) Units V V A W 3 20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1.0 0.9 –55 to +175 °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS3912 Device FDS3912 Reel Size 13’’ Tape width 12mm Quantity 2500 u...