N-Channel MOSFET
FDS3672
March 2003
FDS3672
N-Channel PowerTrench® MOSFET 100V, 7.5A, 22mΩ
Features
• r DS(ON) = 19mΩ (Typ.), VGS = 10V...
Description
FDS3672
March 2003
FDS3672
N-Channel PowerTrench® MOSFET 100V, 7.5A, 22mΩ
Features
r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A Qg(tot) = 28nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse)
Applications
DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control
Formerly developmental type 82763
Electronic Valve Train Systems
Branding Dash
5
5
4 3 2 1
6 7
1 2 3 4
8
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25oC, VGS = 10V, R θJA = 50oC/W) Continuous (TA = 100oC, VGS = 10V, Rθ JA = 50oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 7.5 4.8 Figure 4 416 2.5 20 -55 to 150 A A A mJ W mW/oC
o
Ratings 100 ±20
Units V V
C
Thermal Characteristics
Rθ JA Rθ JA Rθ JC Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) Thermal Resistance, Junction to Case (Note 2) 50 85 25
oC/W oC/W o
C/W
Package Marking and Ordering Information
Device Marking FDS3672 Device FDS3672 Package SO-8 Reel Size 330mm Tape Wi...
Similar Datasheet