FDS3580

FDS3580 April 1999 PRELIMINARY FDS3580 80V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V. Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 80 (Note 1a) Units V V A W ±20 7.6 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS3580 Device FDS3580 Reel Size 13’’ Tape Width 12mm Quantity 2500 ...