FDS2170N3

FDS2170N3 May 2003 FDS2170N3 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching, low gate charge (26nC typical) FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units V V A W °C 3.0 20 3.0 1.8 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS2170N3 Device FDS2170N3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS2170N3 Rev B1W) FDS2170N3...