FDR8521L

FDR8521L August 2000 FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device features a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package. Features V V DROP DROP = 0.07 V @ V = 12 V, I = 1 A.R(ON) = 0.07 Ω IN L = 0.115 V @ V = 5 V, I = 1 A.R(ON) = 0.115 Ω. IN L V V DROP DROP = 0.2 V @ V = 12 V, I =2.9 A.R(ON) = 0.07 Ω IN L = 0.2 V @ V = 5 V,I = 1.8 A.R(ON) = 0.115 Ω. IN L Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model). High density cell design for extremely low on-resistance. Applications Power management Load switch VOU T,C1,CO 5 6 7 8 Q2 4 3 VIN ,R1,C i EQUIVALENT CIRCUIT R1,R 2,C1 VOU T,C1,CO R2 Q1 2 1 C1,CO IN VDR OP + - OUT R2 VO N/ OFF pin 1 ON/OFF SuperSOT -8 TM See Application Cir cuit Absolute Maximum Ratings Symbol V IN V ON/OFF ID PD T J , T stg ESD Input Voltage Range On/Off Voltage Range Load Current - Continuous - Pulsed Maximum Power Dissipation T A =25 oC unless otherwise noted Parameter (Note 1) Ratings 3 - 20 2.5 - 8 (Note 2) Units V V A W °C kV 2.9 8 0.8 -55 to +150 6 (Note 2) Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD...