FDR8508P

FDR8508P March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • -3.0 A, -30 V. • • • • RDS(ON) = 0.052Ω @ VGS = -10V RDS(ON) = 0.086Ω @ VGS = -4.5V. Low gate charge. (8nC typical). High performance trench technology for extremely low RDS(ON) High power and current handling capability. Applications • Load switch • DC/DC converter • Motor driving D2 Small footprint (38% smaller than a standard SO-8);     low profile package (1 mm thick); power handling     capability similar to SO-8. D1 D1 D2 5 6 S2 4 3 2 1 7 8 SuperSOT-8 pin #1 G1 S1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA = 25°C unless otherwise noted Parameter FDR8508P -30 (Note 1a) Units V V A W °C ±20 -3 -20 0.8 -55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 156 40 °C/W °C/W Package Marking and Ordering Information Device Marking .8508 Device FDR8508P Reel Size 13” Tape Width 12mm Quantity 3000 units 1999 Fairchild Semiconductor Corporatio...