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FDR836P

Fairchild Semiconductor
Part Number FDR836P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDR836P April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description SuperSOTTM -8 P-Channel enhancement mod...
Datasheet PDF File FDR836P PDF File

FDR836P
FDR836P

Overview
FDR836P April 1999 FDR836P P-Channel 2.
5V Specified MOSFET General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.
Features • -6.
1 A, -20 V.
RDS(ON) = 0.
030 W @ VGS = -4.
5 V RDS(ON) = 0.
040 W @ VGS = -2.
5 V • • High density cell design for...


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