FDR4410

April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8 package. The SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package. Features 9.3 A, 30 V. RDS(ON) = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D S 5 6 7 4 3 2 1 10 44 D G pin 1 SuperSOT -8 TM D D 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Draint Current - Continuous - Pulsed Maximum Power Dissipation TA = 25oC unless otherwise noted FDR4410 30 ±20 (Note 1a) Units V V A 9.3 40 (Note 1a) (Note 1b) (Note 1c) 1.8 1 0.9 -55 to 150 W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W FDR4410 Rev.C © 1998 Fairchild Semiconductor Corporation Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS BVDSS (TA = 25OC unless otherwise noted ) Conditions Min Typ Max Units Drain-Source Breakdown Voltage Breakd...