FDP8030L

FDP8030L/FDB8030L November 1999 FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V Critical DC electrical parameters specified at elevated temperature Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor High performance trench technology for extremely low RDS(ON) 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1) (Note 1) Units V V A W W°C °C °C 80 300 187 1.25 -65 to +175 275 Total Power Dissipation @# TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC ...