FDP3682

FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100 V, 32 A, 36 mΩ March 2013 Features RDS(on) = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A QG(tot) = 18.5 nC( Typ.) @ VGS = 10 V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Applications Consumer Appliances Synchronous Rectification Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Micro Solar Inverter Formerly developmental type 82755 D D G S D2-PAK (TO-263) G D S TO-220 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature G S FDB3682 / FDP3682 100 ±20 32 23 6 Figure 4 55 95 0.63 -55 to 175 Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-263, Max. Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2), Max. Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area, Max. 1.58 62 43 Unit V V A A A A mJ W W/oC oC oC/W oC/W oC/W ©2002 Fairchild Semiconductor Corporation 1 FDB3682 / FDP3682 Rev. C1 www.fairchildsemi.com FDB3682 / FDP3682 N-Channel PowerTrench ® MOSFET Package Marking...