FDP3672

FDP3672 — N-Channel PowerTrench® MOSFET November 2013 FDP3672 N-Channel PowerTrench® MOSFET 105 V, 41 A, 33 mΩ Features RDS(on) = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A QG(tot) = 28 nC ( Typ.) @ VGS = 10 V Low Miller Charge Low Qrr Body Diode Optimized Efficiency at High Frequencies UIS Capability (Single Pulse and Repetitive Pulse) Applications Consumer Appliances Synchronous Rectification Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Micro Solar Inverter Formerly developmental type 82760 D GDS TO-220 G MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, RθJA = 62oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. (Note 2) S FDP3672 105 ±20 41 31 5.9 Figure 4 48 135 0.9 -55 to 175 1.11 62 Unit V V A A A A mJ W W/oC oC oC/W oC/W ©2002 Fairchild Semiconductor Corporation 1 FDP3672 Rev. C2 www.fairchildsemi.com FDP3672 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP3672 Device FDP3672 Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units E...