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FDP2570 Dataheets PDF



Part Number FDP2570
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 150V N-Channel MOSFET
Datasheet FDP2570 DatasheetFDP2570 Datasheet (PDF)

FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to d.

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FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V • Low gate charge (40nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 150 ± 20 (Note 1) (Note 1) Units V V A A W W°/C °C 22 50 93 0.63 –65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB2570 FDP2570 Device FDB2570 FDP2570 Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 units 2001 Fairchild Semiconductor Corporation FDP2570/FDB2570 Rev C(W) FDP2570/FDB2570 Electrical Characteristics Symbol WDSS IAR TA = 25°C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VDD = 75 V, ID = 11 A Min Typ Max Units 375 11 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 20 V, VGS = –20 V, VGS = 0 V VDS = 0 V VDS = 0 V 150 154 1 100 –100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 11 A ID = 10 A VGS = 6.0 V, VGS = 10 V, ID = 11 A, TJ = 125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 11 A 2 2.6 –7 61 63 127 4 V mV/°C 80 90 175 mΩ ID(on) gFS 25 39 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 75 V, f = 1.0 MHz V GS = 0 V, 1911 106 33 pF pF pF Switching Characteristics td(on) tr td(off.


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