Document
FDP2570/FDB2570
August 2001
FDP2570/FDB2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
• 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
• Low gate charge (40nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
150 ± 20
(Note 1) (Note 1)
Units
V V A A W W°/C °C
22 50 93 0.63 –65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDB2570 FDP2570 Device FDB2570 FDP2570 Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 units
2001 Fairchild Semiconductor Corporation
FDP2570/FDB2570 Rev C(W)
FDP2570/FDB2570
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VDD = 75 V, ID = 11 A
Min
Typ
Max Units
375 11 mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 20 V, VGS = –20 V, VGS = 0 V VDS = 0 V VDS = 0 V 150 154 1 100 –100 V mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 11 A ID = 10 A VGS = 6.0 V, VGS = 10 V, ID = 11 A, TJ = 125°C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 11 A
2
2.6 –7 61 63 127
4
V mV/°C
80 90 175
mΩ
ID(on) gFS
25 39
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 75 V, f = 1.0 MHz
V GS = 0 V,
1911 106 33
pF pF pF
Switching Characteristics
td(on) tr td(off.