FDP16AN08A0

FDP16AN08A0 — N-Channel PowerTrench® MOSFET October 2013 FDP16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 58 A, 16 mΩ Features Applications RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A QG(tot) = 28 nC ( Typ.) @ VGS = 10 V Low Miller Charge Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82660 D GDS TO-220 G MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient (Note 2), Max. S FDP16AN08A0 75 ±20 58 44 9 Figure 4 117 135 0.9 -55 to 175 Unit V V A A A mJ W W/oC oC 1.11 62 oC/W oC/W ©2002 Fairchild Semiconductor Corporation 1 FDP16AN08A0 Rev. C2 www.fairchildsemi.com FDP16AN08A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDP16AN08A0 Device FDP16AN08A0 Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 2...