N-Channel MOSFET
FDB13AN06A0 / FDP13AN06A0
July 2003
FDB13AN06A0 / FDP13AN06A0
N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ
Features
...
Description
FDB13AN06A0 / FDP13AN06A0
July 2003
FDB13AN06A0 / FDP13AN06A0
N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ
Features
r DS(ON) = 11.5mΩ (Typ.), VGS = 10V, ID = 62A Qg(tot) = 22nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82555
Applications
Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
D
SOURCE DRAIN GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) GATE
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 62 44 10.9 Figure 4 56 115 0.77 -55 to 175 A A A A mJ W W/oC
o
Ratings 60 ±20
Units V V
C
Thermal Characteristics
Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.3 62 43
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and ...
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