20V N-Channel MOSFET
FDN371N
September 2001
FDN371N
20V N-Channel PowerTrench® MOSFET
General Description
This 20V N-Channel MOSFET uses Fa...
Description
FDN371N
September 2001
FDN371N
20V N-Channel PowerTrench® MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
Features
2.5 A, 20 V. RDS(ON) = 50 mΩ @ VGS = 4.5 V RDS(ON) = 60 mΩ @ VGS = 2.5 V
Applications
Load switch Battery protection Power management
Low gate charge (7.6 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON)
D
D
S
G S
SuperSOT -3
TM
G
TA=25 C unless otherwise noted
o
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
20 ± 12
(Note 1a)
Units
V V A W °C
2.5 10 0.5 0.46 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering Information
Device Marking 371 Device FDN371N Reel Size 7’’ Tape width 8mm Quantity 3000 units
©2001 Fairchild Semiconductor Corporation
FDN371N Rev C (W)
FDN371N
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leaka...
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