N-Channel MOSFET
April 1999
FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is...
Description
April 1999
FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
SOT-23
SuperSOTTM -6
SuperSOTTM -8
SO-8
SOT-223
SOIC-16
D
D
9A 35
S
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless other wise noted
Ratings Units
VDSS VGSS ID PD TJ,TSTG RθJA RθJC
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1a)
30 ±20 2.7 15 0.5 0.46 -55 to 150
V V A
W
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
© 1999 Fairchild Semiconductor Corporation
FDN359AN Rev.C
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERI...
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