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FDLL916B Dataheets PDF



Part Number FDLL916B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description High Conductance Fast Diode
Datasheet FDLL916B DatasheetFDLL916B Datasheet (PDF)

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN GRAY BLACK RED WHITE BROWN BROWN BLACK LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Fast Diode Sourced from Process D3. Absolute Ma.

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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN GRAY BLACK RED WHITE BROWN BROWN BLACK LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Fast Diode Sourced from Process D3. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless otherwise noted Parameter Value 75 200 300 400 1.0 4.0 -65 to +200 175 Units V mA mA mA A A °C °C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max 1N/FDLL 914/A/B / 4148 / 4448 500 3.33 300 Units mW mW/°C °C/W ã 1997 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 High Conductance Fast Diode (continued) Electrical Characteristics Symbol BV IR TA = 25°C unless otherwise noted Parameter Breakdown Voltage Reverse Current Test Conditions IR = 100 µ A IR = 5.0 µ A VR = 20 V VR = 20 V, TA = 150°C VR = 75 V IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 30 mA IF = 100 mA VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V (60 mA), Irr = 1.0 mA, RL = 100 Ω Min 100 75 Max Units V V nA µA µA mV mV V V V V pF pF nS VF CO TRR 1N914B / 4448 1N916B 1N914 / 916 / 4148 1N914A / 916A 1N916B 1N914B / 4448 Diode Capacitance 1N916/A/B / 4448 1N914/A/B / 4148 Reverse Recovery Time Forward Voltage 620 630 25 50 5.0 720 730 1.0 1.0 1.0 1.0 2.0 4.0 4.0 Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA V R - REVERSE VOLTAGE (V) V R REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V IR - REVERSE CURRENT (nA) 120 Ta= 25°C 160 150 140 130 120 110 Ta= 25°C 100 80 60 40 20 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 100 1 2 5 10 20 30 50 I R - REVERSE CURRENT (uA) 3 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA V F - FORWARD VOLTAGE (mV) 550 500 450 400 350 300 250 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Ta= 25°C FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 100 mA V F - FORWARD VOLTAGE (mV) 750 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 Ta= 25°C 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 High Conductance Fast Diode (continued) Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA V V F F - FORWARD VOLTAGE (mV) VF - 0.01 - 20 mA (-40 to +65 Deg C) FORWARD VOLTAGE vs AMBIENT TEMPERATURE 900 800 700 600 500 400 300 0.01 0.03 0.1 0.3 1 3 I F - FORWARD CURRENT (mA) 10 Ta= +65°C Typical V F - FORWARD VOLTAGE (V) 1.6 1.4 1.2 1 0.8 Ta= 25°C Ta= -40°C Ta= +25°C 0.6 10 20 30 50 100 200 300 I F - FORWARD CURRENT (mA) 500 CAPACITANCE vs REVERSE VOLTAGE VR = 0.0 to 15 V Ta= 25°C REVERSE RECOVERY TIME vs REVERSE CURRENT REVERSE RECOVERY (nS) 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60 Ta= 25°C 0.9 CAPACITANCE (pF) 0.85 0.8 0.75 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 IF = 10 mA - IRR = 1.0 mA - Rloop = 100 Ohms P P D D - POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 500 I - CURRENT (mA) 400 300 200 100 0 IR -F OR WA RD POWER DERATING CURVE 500 DO-35 400 Io - A ST VER AT AGE EREC TIFIE mA D CU RRE NT mA CU RR EN TS TE AD Y 300 SOT-23 200 100 0 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED.


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