FDH50N50

FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET October 2008 UniFETTM Features 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V Low gate charge ( typical 105 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. GD S TO-247 FDH Series G DS TO-3PN FDA Series {D z  G{ z z {S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter FDH50N50_F133/FDA50N50 Drain-Source Voltage 500 Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) 48 30.8 192 Gate-Source voltage ±20 Single Pulsed Avalanche Energy (Note 2) 1868 Avalanche Current (Note 1) 48 Repetitive Avalanche Energy (Note 1) 62.5 Peak Diode Recovery dv/dt (Note 3) 4.5 Power Dissipation (TC = 25°C) 625 - Derate above 25°C 5 Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 Thermal...