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FDH047AN08A0

Fairchild Semiconductor

N-Channel MOSFET

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench®...


Fairchild Semiconductor

FDH047AN08A0

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FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A Qg(tot) = 92nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82684 Applications 42V Automotive Load Control Starter / Alternator Systems Electronic Power Steering Systems Electronic Valve Train Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems DRAIN (FLANGE) SOURCE DRAIN SOURCE DRAIN GATE GATE SOURCE DRAIN GATE D DRAIN (FLANGE) DRAIN (FLANGE) G S TO-220AB FDP SERIES TO-262AB FDI SERIES TO-247 FDH SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 144oC, VGS = 10V) Continuous (TC = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 15 Figure 4 475 310 2.0 -55 to 175 A A A mJ W W/oC o Ratings 75 ±20 Units V V C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-262, TO-247 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-247 (Note 2) 0.48 62...




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