FDG6332C

FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. Features Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick) Applications DC/DC converter Load switch LCD display inverter S G D D Pin 1 1 2 3 Complementary 6 5 4 G S SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Q1 20 ±12 (Note 1) Q2 –20 ±12 –0.6 –2 0.3 –55 to +150 Units V V A W °C 0.7 2.1 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking .32 Device FDG6332C Reel ...