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FDG6320C

Fairchild Semiconductor
Part Number FDG6320C
Manufacturer Fairchild Semiconductor
Description Dual N & P Channel Digital FET
Published Mar 30, 2005
Detailed Description November 1998 FDG6320C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancem...
Datasheet PDF File FDG6320C PDF File

FDG6320C
FDG6320C

Overview
November 1998 FDG6320C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features N-Ch 0.
22 A, 25 V, RDS(ON) = 4.
0 Ω @ VGS= 4.
5 V, RDS(ON) = 5.
0 Ω @ VGS= 2.
7...


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