FDG6306P

FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V – 12V). Features –0.6 A, –20 V. Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS = –4.5 V RDS(ON) = 630 mΩ @ V GS = –2.5 V Applications Battery management Load switch S G D G 2 or 5 S 1 or 4 6 or 3 D 5 or 2 G 4 or 1 S D G Pin 1 S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ± 12 (Note 1) Units V V A W °C –0.6 –2.0 0.3 –55 to +150 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking .06 Device FDG6306P Reel Size 7’’ Tape width 8mm Quantity 3000 units © 2001 Fairchild Semiconductor Corporation FDG6306P Rev C(W) FDG6306P Electrical Characteristics Symbol BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless othe...