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FDG6302P

Fairchild Semiconductor
Part Number FDG6302P
Manufacturer Fairchild Semiconductor
Description Dual P-Channel/ Digital FET
Published Mar 30, 2005
Detailed Description July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode fi...
Datasheet PDF File FDG6302P PDF File

FDG6302P
FDG6302P

Overview
July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features -25 V, -0.
14 A continuous, -0.
4 A peak.
RDS(ON) = 10 Ω @ VGS= -4.
5 V, RDS(ON) = 13 Ω @ VGS= -2.
7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.
5 V).
Gate-Source Zener for ESD ruggednes...


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