FDG329N

FDG329N October 2001 FDG329N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V Fast switching speed Low gate charge (3.3 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability. Applications DC/DC converter Power management Load switch S D D G Pin 1 1 2 D D 6 5 4 SC70-6 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1a) Units V V A W °C 1.5 6 0.42 0.38 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 300 333 °C/W °C/W Package Marking and Ordering Information Device Marking .29 Device FDG329N Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2001 Fairchild Semiconductor International FDG329N Rev C (W) FDG329N Electrical Characteristics...