P-Channel Logic Level PowerTrench MOSFET
FDG316P
December 2001
FDG316P
P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level...
Description
FDG316P
December 2001
FDG316P
P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
-1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V.
Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package.
Applications
DC/DC converter Load switch Power Management
D D
S
1
6
2
5
SC70-6
D
D
G
3 4
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD T J , T stg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A = 25°C unless otherwise noted
Parameter
Ratings
-30
(Note 1a)
Units
V V A W °C
± 20 -1.6 -6 0.75 0.48 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Tem perature Range
Thermal Characteristics
R θJA Therm al Resistance, Junction-to-Am bient
(Note 1b)
260
° C/W
Package Marking and Ordering Information
Device Marking .3 6 Device
FDG316P
Reel Size
7’’
Tape W idth
8m m
Quantity
3000 units
200 1 Fairchild Semiconductor Corporation
FDG316P Rev. D
FDG316P
Electrical Chara...
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