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FDG313N

Part Number	FDG313N
Manufacturer	Fairchild Semiconductor
Description	N-Channel Digital FET
Published	Mar 30, 2005
Detailed Description	FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect tran...
Datasheet	FDG313N PDF File

Overview

FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
Features • 0.
95 A, 25 V.
RDS(on) = 0.
45 Ω @ VGS = 4.
5 V RDS(on) = 0.
60 Ω @ VGS = 2.
7 V.
• • • • Low gate charge (1.
64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.
5V).
Gate-Source Zener for ESD ruggedn...

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