FDG312P

FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V. Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications Load switch Battery protection Power management D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1) Units V V A W ±8 -1.2 -6 0.75 0.55 0.48 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 260 °C/W Package Outlines and Ordering Information Device Marking .12 Device FDG312P Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©1999 Fairchild Semiconductor Corporation FDG312P Rev. C FDG312P DMOS Electrical Characteristics Symbol Off Characteristics BVDSS ∆BV...